Sentech 集成等離子刻蝕和沉積的多腔系統(tǒng)

高產(chǎn)量

等離子蝕刻和沉積腔體可以與多達(dá)兩個片盒站組合，用于到200 mm晶片的高產(chǎn)量工藝。

研發(fā)

三到六個端口傳送腔室可用于集成ICP等離子刻蝕機、RIE刻蝕機、原子層沉積系統(tǒng)、PECVD和ICPECVD沉積設(shè)備，以滿足研發(fā)的要求。樣品可以通過預(yù)真空室和/或真空片盒站加載。

SENTECH多腔系統(tǒng)包括等離子刻蝕和/或沉積腔體、傳送腔室、預(yù)真空室或片盒站。傳送腔室包括傳送機械手臂，可適用于三至六個端口�？梢允褂枚噙_(dá)兩個片盒站來增加產(chǎn)量。傳送腔室可以配備多種選擇。

用于研發(fā)的SENTECH多腔系統(tǒng)通過圖形用戶界面控制軟件操作。強大的控制軟件可用于工業(yè)域高產(chǎn)量的多腔系統(tǒng)。

高產(chǎn)量的多腔系統(tǒng)

ICP-RIE等離子刻蝕腔體可與兩個片盒站組合用于200mm晶片的高產(chǎn)量并行工藝。

用于研發(fā)的多腔系統(tǒng)

ICP-RIE，RIE，PECVD和ICPECVD等腔體可與預(yù)真空室，片盒站等組合使用，以滿足研發(fā)的特殊要求。

Sentech integrates a multi-cavity system of plasma etching ａnd deposition

High yield

Plasma etching ａnd deposition Chambers can be combined with up to two wafer box stations for high-throughput processes to 200 mm wafers.

Research ａnd development

Three to six port transfer Chambers can be used to integrate ICP plasma etcher, RIE etcher, atomic layer deposition system, PECVD ａnd ICPECVD deposition equipment to meet the requirements of r&d.Samples can be loaded through a pre-vacuum chamber and/or vacuum chip box station.

SENTECH multi-chamber system includes plasma etching and/or deposition Chambers, transport Chambers, pre-vacuum Chambers, or wafer box stations.The transfer chamber includes a transfer arm that can be used for three to six ports.Up to two box stations can be used to increase production.Transport Chambers can be equipped with a variety of options.

SENTECH multi-cavity system for development controls software operation through graphical user interface.Powerful control software can be used for industrial applications with high throughput multi-cavity systems.